Well-controlled population of dislocations were introduced in 4H-SiC by bending in cantilever mode and annealing (400 to 700C). The introduced-defects consist of double stacking faults bound by 30° Si(g) partial dislocations. Their expansion was asymmetric with a velocity directly measured on the surface of KOH etched-samples after deformation. Values of the activation energy and the stress exponent were given, and the formation of double stacking faults was analysed.

Study of Shockley Partial Dislocation Mobility in Highly N-Doped 4H-SiC by Cantilever Bending. H.Idrissi, G.Regula, M.Lancin, J.Douin, B.Pichaud: Physica Status Solidi C, 2005, 2[6], 1998-2003