TEM observations of the microstructure of 4H-silicon carbide deformed at 150C under 5GPa were reported which confirmed the coexistence of perfect and dissociated dislocations under such conditions. It was argued that dislocations were nucleated as perfect dislocations in the shuffle set, then they cross-slip in the more stable glide set where they dissociate into partials.

TEM Observations of the Coexistence of Perfect and Dissociated Dislocations in SiC under High Stress. J.L.Demenet, X.Milhet, J.Rabier: Physica Status Solidi C, 2005, 2[6], 1987-91