Transmission electron microscopy and KOH etching were used to determine the structure of the carrot defect in 4H-SiC epilayers. The defect consisted of 2 intersecting planar faults on prismatic {1¯1▪0} and basal {00▪1} planes. Both faults were connected by a stair-rod dislocation with Burgers vector 1/n [10▪0], with n > 3 at the crossover. A Frank-partial dislocation with b = 1/12[4¯4▪3] terminated the basal fault.

Structure of the Carrot Defect in 4H-SiC Epitaxial Layers. M.Benamara, X.Zhang, M.Skowronski, P.Ruterana, G.Nouet, J.J.Sumakeris, M.J.Paisley, M.J.O’Loughlin: Applied Physics Letters, 2005, 86[2], 021905 (3pp)