Two methods of defect-selective etching of SiC were described: (i) orthodox etching in molten KOH-NaOH eutectic with 10% of MgO powder (E + M etch) and (ii) electroless photo-etching in aqueous KOH solutions (PEC method). The first etch showed a similar effectiveness in revealing different types of dislocations, micropipes and stacking faults, as did the commonly used molten KOH. The second approach was new for studying defects in SiC and was most suitable for revealing stacking faults both on the disoriented (00▪1) basal planes and on the (1¯1▪0) cleavage surfaces. Cross-calibration of both techniques and examples of calibration of PEC etch features by TEM were shown.

Defect-Selective Etching of SiC. J.L.Weyher, S.Lazar, J.Borysiuk, J.Pernot: Physica Status Solidi A, 2005, 202[4], 578-83