Ordered CuPt B-type layers were grown onto vicinal GaAs(001) substrates and studied using post-growth transmission electron microscopy. It was concluded that the antiphase boundaries were active sites for the nucleation of 2-dimensional islands on the terraces of vicinal surfaces. The growth on these surfaces was otherwise dominated by step flow growth. The growth and collision of 2-dimensional islands with a normal step extended the antiphase boundaries in directions which were inclined to the normal growth direction. According to this picture of the extension of antiphase boundaries, it followed that they could not be easily removed during crystal growth. It was also suggested that island nucleation and growth occurred not only on vicinal surfaces but also on an exactly (001) surface.

Extension Mechanism of Antiphase-Boundaries in CuPt B-Type Ordered GaInP2 and (Al,Ga)InP2 Epitaxial Layers S.Takeda, Y.Kuno, N.Hosoi, K.Shimoyama: Journal of Crystal Growth, 1999, 205[1-2], 11-9