Nanoclusters of SiC were synthesized in Si by simultaneous dual implantation using two ion beams, of C and Si ions. This implantation mode was associated with extra excess vacancy generation. The effect of vacancies on SiC synthesis was investigated in this study. The amount of synthesized SiC was compared for different implantation modes, simultaneous and sequential ones. Sequential pre-deposition of vacancy defects in Si before the C implantation was performed by additional Si and He implantation. The simultaneous dual beam implantation was found to be the only method to improve SiC synthesis. The generation of both excess and He induced vacancies by a sequential implantation process was disadvantageous for SiC nanocluster formation. The pre-deposition of vacancy defects was accompanied by higher crystal damage and/or the defects were annealed out during the subsequent C implantation at above 400C. Vacancies must be created in situ during C implantation to achieve enhanced output of SiC.

Effect of Excess Vacancies in Ion Beam Synthesis of SiC Nanoclusters. R.Kögler, F.Eichhorn, A.Mücklich, W.Skorupa, C.Serre, A.Perez-Rodriguez: Vacuum, 2005, 78[2-4], 177-80