The atomic configuration of an O-related defect complex in a SiC crystal was determined with the analyses of the extended energy-loss fine structure and energy-loss near-edge structure in the electron energy-loss spectroscopy associated with a transmission electron microscope. It was found that O occupied a C site substitutionally in the SiC lattice, forming the O-VC (C vacancy) complex. The structure was very similar to the so-called A-center, which was known as an O-vacancy complex in Si. The present analysis could open up a wide range of possibilities for the structural analysis of point defects associated with light impurities such as C, O and N, complementary to XAFS techniques using synchrotron orbital radiation sources.

Structure of an Oxygen-Related Defect Complex in SiC Studied with Electron Energy-Loss Spectroscopy. S.Muto, H.Sugiyama, T.Kimura, T.Tanabe: Japanese Journal of Applied Physics, 2004, 43[3], 1076-80