Sublimation boule growth of 6H-SiC onto (11▪0) 6H-SiC substrates was investigated. Hollow defects were generated in the crystals grown on (11▪0) substrates, and they penetrated along the growth direction to the as-grown surface. A new growth model of SiC on (11▪0) SiC substrates that distinguished between 2-dimensional growth and 3-dimensional growth was proposed. The generation of both stacking faults and hollow defects on (11▪0) substrates was attributed to the 3-dimensional growth. The growth conditions were modified and used to suppress the generation of hollow defects. These conditions included the reduction of the growth temperature in the initial stage of the growth, and the increase of the N concentration in the vapor phase. Due to the changes in the growth conditions, the density of the hollow defects on (11▪0) substrates was reduced by an order of magnitude to approximately 103/cm2. An atomically flat as-grown surface was obtained by the sublimation boule growth technique in N ambient.

Reduction of Hollow Defects in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique on (11▪0) 6H-SiC Substrates. T.Nishiguchi, Y.Masuda, S.Ohshima, S.Nishino: Japanese Journal of Applied Physics, 2004, 43[4A], 1293-9