A highly sensitive electron spin resonance technique, spin-dependent recombination, was used to observe deep level dangling bond centers at, and very near to, the SiC/SiO2 interface in fully processed n-channel 4H–SiC lateral metal-oxide-semiconductor field-effect transistors. The axially symmetrical g-tensor of the largest signal strongly suggested that the defect responsible was a dangling bond center with the dangling bond orbital pointing along the crystalline c-axis.

Observation of Trapping Defects in 4H–Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors by Spin-Dependent Recombination. D.J.Meyer, P.M.Lenahan, A.J.Lelis: Applied Physics Letters, 2005, 86[2], 023503 (3pp)