Boron diffusion in SiGeC layers was studied under different actual process conditions, with rapid thermal annealing (1020 to 1100C). Model parameters for the process simulator TSUPREM-4 were derived for equilibrium and transient enhanced diffusion conditions. The model and model parameters were validated for a 0.13μm BiCMOS process.

TSUPREM-4 Based Modeling of Boron and Carbon Diffusion in SiGeC Base Layers under Rapid Thermal Annealing Conditions. A.Sibaja-Hernandez, M.W.Xu, S.Decoutere, H.Maes: Materials Science in Semiconductor Processing, 2005, 8[1-3], 115-20