The properties of deep levels which were found in Mg-doped samples, grown by metal-organic chemical vapour deposition, were studied. Two distinct levels, E1 and E2, were observed; with activation energies of 0.19 and 0.514eV, respectively. The distribution profiles of E1, E2 and dopant Mg indicated that all 3 exhibited similar behaviours. The concentration increased gradually from the interface of the pn junction. The E1 and E2 concentrations also increased with increasing Mg-dopant concentration. Thus, it was concluded that these deep levels were due to Mg-related defects.

Mg-Related Deep Levels in AlInP Y.R.Wu, W.J.Sung, S.C.Lee, T.J.Li, W.Lee: Japanese Journal of Applied Physics - 1, 1999, 38[7A], 4049-50