A deep level in Te-doped Al0.5In0.5P which had been grown by metal organic chemical vapour deposition was studied by using deep level transient spectroscopy. The thermal activation energy was 0.24eV, and the trap concentration was related to the Te concentration. The deep level concentration increased strongly with increasing Te concentration. The trap distribution profile exhibited the same behavior as the Te concentration profile. It was therefore concluded that the deep level in Te-doped material was a dopant-related defect.

A Dopant-Related Defect in Te-Doped AlInP Y.R.Wu, W.J.Sung, T.C.Wen, S.C.Lee, W.Lee: Japanese Journal of Applied Physics - 1, 1999, 38[8], 4720-1