Deep-level transient spectroscopy and transmission electron microscopy were used to study Eu-implanted layers. The implantation was performed at room temperature in random and channelled geometries. From deep-level transient spectroscopy, intrinsic defects with associated levels located in the band-gap (below the conduction band) were determined. A new electron trap, named Eu2, was pointed out. Its associated level was located at about Ec-0.36eV, and the defect was suggested to be related to the Eu rare-earth ion. Transmission electron microscopic investigations revealed a difference in structure that was caused by changing the implantation geometry. Randomly-implanted samples contained numerous planar defects.

Deep Level Transient Spectroscopy and TEM Analysis of Defects in Eu Implanted GaN. A.Colder, T.Wojtowicz, P.Marie, P.Ruterana, V.Matias, M.Mamor, A.Vantomme, S.Eimer, L.Méchin: Physica Status Solidi C, 2005, 2[7], 2450-3. See also: Applied Physics Letters, 2004, 85[12], 2244-6