The EBIC investigations of extended defect system in GaN epitaxial layers with different electron mobility and dislocation density were carried out. The recombination strength and defect cylinder radius for threading dislocations were estimated from their EBIC profiles. Some cellular structure was revealed in the samples with the less-ordered mosaic structure that could be associated with the enhanced recombination activity of domain boundaries in such layers.

SEM/EBIC Investigations of Extended Defect System in GaN Epilayers. N.M.Shmidt, V.V.Sirotkin, A.A.Sitnikova, O.A.Soltanovich, R.V.Zolotareva, E.B.Yakimov: Physica Status Solidi C, 2005, 2[6], 1797-801