It was demonstrated that He high-dose implantation was able to produce voids in GaN and the behavior of material dislocations under these conditions was described. Two main types of nanovoid were encountered after annealing: cylindrical and pyramidal. During their thermal evolution, these vacancy-type defects interacted with dislocations favouring their local annihilation. The experimental results demonstrated a short-range interaction between the nanovoid layer and dislocations, thus having potential applications for the improvement of GaN epitaxial layer quality.

Interaction between Dislocations and He-Implantation Induced Voids in GaN Epitaxial Layers. D.Alquier, C.Bongiorno, F.Roccaforte, V.Raineri: Applied Physics Letters, 2005, 86[21], 211911 (3pp)