Extended defect density reduction in m-plane (1¯1▪0) GaN films was achieved via lateral epitaxial overgrowth by hydride vapor phase epitaxy. Several dielectric mask patterns were used to produce 10 to 100µm-thick, partially and fully coalesced non-polar GaN films. The X-ray rocking curves indicated that the films were free of wing tilt. Transmission electron microscopy showed that basal-plane stacking fault and threading dislocation densities decreased from 105/cm and 109/cm2, respectively, less than 3 x 103/cm and ~5 x 106/cm2, respectively, in the Ga-face (00▪1) wing of the lateral epitaxial overgrowth films. Stacking faults persisted in <00▪1>-oriented stripe lateral epitaxial overgrowth films, though threading dislocation reduction was observed in the windows and wings. Band-edge cathodoluminescence intensity increased 2 to 5 times in the wings compared to the windows, depending upon the stripe orientation. Stacking faults in the low threading dislocation density wings of <00▪1>-stripe films did not appear to act as non-radiative recombination centers.

Defect Reduction in (1¯100) m-Plane Gallium Nitride via Lateral Epitaxial Overgrowth by Hydride Vapor Phase Epitaxy. B.A.Haskell, T.J.Baker, M.B.McLaurin, F.Wu, P.T.Fini, S.P.DenBaars, J.S.Speck, S.Nakamura: Applied Physics Letters, 2005, 86[11], 111917 (3pp)