Structural transformations of {10▪0} inversion domain boundaries were induced by their interactions with basal stacking faults in epitaxially grown GaN films. The admissible line defects at the inversion-domain-boundary/stacking-fault junction lines were edge and mixed type partial dislocations that were often associated with steps of the inversion domain boundary plane. These interactions were analyzed at the atomic scale by using large scale empirical potential calculations. The majority of the core structures possess either dangling or highly strained bonds. Twenty-eight stable junction line configurations were identified, 16 of them resulting in stable transformations of the energetically favorable inversion domain boundaries to electrically active Holt types. The calculated energies and core configurations of the junction lines were considered in relevance to their combined dislocation and step character. The calculated models were compared through image simulation with high resolution transmission electron microscopy observations and were found in good agreement.

Junction Lines of Inversion Domain Boundaries with Stacking Faults in GaN. J.Kioseoglou, G.P.Dimitrakopulos, P.Komninou, H.M.Polatoglou, A.Serra, A.Béré, G.Nouet, T.Karakostas: Physical Review B, 2004, 70[11], 115331 (7pp)