The relaxation of the misfit strain by the formation of misfit dislocations in InxGa1–xN/GaN multiple quantum wells grown by metal-organic chemical-vapor deposition was investigated by the cross-sectional transmission electron microscopy, double crystal X-ray diffraction, and temperature-dependent photoluminescence. It was found that the misfit dislocations generated from strain relaxation were all pure-edge threading dislocations with burgers vectors of 1/3<11▪0>. The misfit dislocations arise from the strain relaxation due to the thickness of strained layer greater than the critical thickness. The relaxation of strained layer was mainly achieved by the formation of dislocations and localization of In, while the dislocations changed their slip planes from {00▪1} to {10▪0}. With the increasing temperature, the efficiency of photoluminescence decrease sharply. It indicated that the relaxation of the misfit strain had a strong effect on optical efficiency of film.

Generation and Behavior of Pure-Edge Threading Misfit Dislocations in InxGa1-xN/GaN Multiple Quantum Wells. W.Lü, D.B.Li, C.R.Li, Z.Zhang: Journal of Applied Physics, 2004, 96[9], 5267-70