High-resolution near edge X-ray absorption spectroscopy and X-ray photo-electron spectroscopy were used to characterize ultra-thin plasma-nitrided silicon oxides. The direct observation of interstitial molecular N2 was made by vibrationally resolved N K-edge absorption spectroscopy. The N2 molecules were trapped during the plasma nitridation at the near surface and could be eliminated by annealing via molecular out-diffusion.

Direct Observation of Interstitial Molecular N2 in Si Oxynitrides. Y.Chung, J.C.Lee, H.J.Shin: Applied Physics Letters, 2005, 86[2], 022901 (3pp)