The diffusion coefficient of Cu in (Ti,Zr)N was measured by X-ray diffraction and 4-point probe analyses after annealing Cu/(Ti,Zr)N/Si multi-layered samples at 500 to 900C. Cu diffusion in (Ti,Zr)N had components from both the grain boundaries and the lattice based on diffusional analysis. This study suggested that for the measurement of the diffusion coefficient of Cu, 4-point probe analysis was more precise and sensitive than X-ray diffraction analysis. Additionally, (Ti,Zr)N had better Cu diffusion barrier properties than those of TaN and TiN.

Diffusion of Copper in Titanium Zirconium Nitride Thin Films. Y.L.Kuo, H.H.Lee, C.Lee, J.C.Lin, S.L.Shue, M.S.Liang, B.J.Daniels: Electrochemical and Solid-State Letters, 2004, 7[3], C35-7