An extensive review of the effect of impurities such as C, O, Si and H in solid-state devices was presented. It was noted that the electronic and vibrational properties of semiconductors were significantly altered by the presence of such impurities. Issues which were related to local vibrational modes in semiconductors were considered; with the emphasis on infra-red and Raman spectroscopy. Among the topics covered were: interstitial O, B-H complexes and vacancy-O complexes in Si; Se-H complexes in AlSb; interstitial O, vacancy-O complexes, SiO2 complexes, DX centres, Si-H complexes, C-H complexes, and (CAs)2H complexes in GaAs; and Mg-H complexes and H-decorated vacancies in GaN.

Local Vibrational Modes of Impurities in Semiconductors M.D.McCluskey: Journal of Applied Physics, 2000, 87[8], 3593-617