The production behavior of irradiation defects in α-alumina and sapphire was studied by in situ luminescence measurement technique under ion beam irradiation of H+ and He+. The luminescence intensity of the F+ centers at 330nm was observed to decrease monotonically up to 800K, while the intensity of the F0 centers at 410nm to show non-monotonic temperature dependence. In the latter case, the intensity decreased up to 600K, and then increased above this temperature. It was also observed that the luminescence intensity at 410nm was lower in the He+ irradiation than in the H+ irradiation. These observations were analyzed by considering the production mechanisms and reaction kinetics of the irradiation defects of F-type centers.

Production Behavior of Irradiation Defects in α-Alumina and Sapphire under Ion Beam Irradiation. K.Moritani, I.Takagi, H.Moriyama: Journal of Nuclear Materials, 2004, 326[2-3], 106-13