Electron paramagnetic resonance was studied in aluminium oxide films deposited by atomic layer deposition onto (100)Si. Multiplet spectra were observed, which could be consistently decomposed assuming the presence of only Pb0 and Pb1 centres, which were well known in Si/SiO2 structures. Al2O3 films deposited on HF-treated (100)Si exhibit unpassivated Pb0 and Pb1 centres, with concentrations of 7.7 x 1011/cm2 and 8 x 1010/cm2, respectively. Rapid thermal annealing of the substrate in NH3 prior to film deposition reduced the unpassivated Pb0 concentration to 4.5 x 1011/cm2. Forming-gas annealing at 400 to 550C caused no further reduction in defect density; this was tentatively related to a spread in passivation activation energy associated with low-temperature deposition.

Electron Paramagnetic Resonance Evaluation of Defects at the (100)Si/Al2O3 Interface. B.J.Jones, R.C.Barklie: Journal of Physics D, 2005, 38[8], 1178-81