Single crystals were grown by using the Bridgman technique, and microscopic observations of the as-grown crystals revealed features, such as striations on the top free surface, which were linked to the growth conditions. An HNO3-based reagent which was capable of revealing dislocations was developed, and etch pits were produced at the dislocation sites. However, some discrepancies were observed on matched cleavage surfaces. A general matching of the etch pits indicated that they lay at dislocation sites. The occasional deviations in matching were shown to be due to the branching and bending of dislocations. Sequential etching showed that the etch pits retained their sites but grew in size with increasing etching time. This provided further evidence that the etch pits were at dislocation sites.

Crystal Growth and Defect Study of BiSbTe3 C.F.Desai, S.N.Dhar: Philosophical Magazine Letters, 2000, 80[6], 435-40