The O in-diffusion in a liquid phase epitaxial thick film of YBCO on a MgO substrate was investigated by the isothermal electrical resistance relaxation. The results indicated an in-diffusion activation energy of 1.09eV and a chemical diffusion coefficient of 10-10 to 10-9cm2/s at 425 to 500C. In comparison with films prepared by conventional vapor deposition, the liquid phase epitaxial thick film exhibited a larger relaxation characteristic time and thus needs much more time to be fully oxygenated due to the crystal perfection and longer diffusion distance.

Oxygen In-Diffusion in LPE Thick Films of YBCO by Electrical Resistance Relaxation. H.Zhang, X.Yao, X.H.Zeng: Physica Status Solidi A, 2004, 201[10], 2305-11

 

Table 6

Diffusivity of Ag in Cu3Ba2YO7 as a Function

of Temperature and Annealing Duration

 

Duration (h)

Temperature (C)

D (cm2/s)

5

850

8.97 x 10-9

8

850

6.49 x 10-9

11

850

4.36 x 10-9

14

850

3.02 x 10-9

8

800

1.90 x 10-9

11

800

1.24 x 10-9

14

800

6.79 x 10-10

17

800

3.13 x 10-10

11

750

9.80 x 10-10

14

750

6.87 x 10-10

17

750

2.83 x 10-10

20

750

1.95 x 10-10

14

700

3.52 x 10-10

17

700

1.53 x 10-10

20

700

6.50 x 10-11

24

700

4.62 x 10-11