The epitaxial growth of CdSe on (111)GaAs was achieved by electrodeposition from an aqueous electrolyte. The structure of the film corresponded to the cubic modification of CdSe. The quality of the epitaxy was investigated by using reflection high-energy electron diffraction, transmission electron microscopic and X-ray diffraction techniques. The large mismatch (7.4%) between CdSe and GaAs was accommodated mainly by interfacial dislocations, but also resulted in the formation of a high density of twins or stacking faults in the CdSe structure, and in the broadening of the reflections which were observed in reflection high-energy electron diffraction and X-ray diffraction patterns. The quality of the epitaxy rapidly degraded upon increasing the layer thickness. The epitaxial growth of CdSe onto (111)GaAs was also demonstrated by high-resolution electron microscopic observations of cross-sectional thin foils. The orientation of the samples was the Laue symmetrical one; in which the [1¯10] axis was aligned parallel to the electron beam.

Epitaxial Growth of Electrodeposited Cadmium Selenide on (111) Gallium Arsenide H.Cachet, R.Cortes, M.Froment, G.Maurin: Philosophical Magazine Letters, 1999, 79[10], 837-40