Micro-indentation was performed at room temperature in order to generate dislocations on the Cd(111) and Te((¯1¯1¯1) faces of unintentionally doped n-type crystals. The effect of the resultant dislocations was monitored by means of C-V and photoluminescence techniques. The results revealed a reduction in donor concentration, which was essentially due to Cd vacancies, and an increase in the band-gap width. The long arms of the indentation rosette consisted of Cd(g)-type dislocations on the Cd face and Te(g)-type dislocations on the Te face. The main defects on the Te and Cd faces were VCd and VTe, respectively.

Study of the Effect of Dislocations Introduced by Indentation on Cd(111) and Te(¯1¯1¯1) Faces on the Electrical and Optical Properties of CdTe K.Guergouri, N.Brihi, R.Triboulet: Journal of Crystal Growth, 2000, 209[4], 709-15