High-temperature electrical data were explained in terms of the theory of quasi-chemical reactions between defects; using solubility results for In in CdTe. The free carrier density depended upon the dopant solubility, and electrons were compensated by both native point defects (Cd vacancies) and the In-containing associate.

Defect Chemistry in CdTe<In> Crystals P.Fochuk, O.Korovyanko, I.Turkevycha, O.Panchuk, P.Siffert: Journal of Crystal Growth, 1999, 207[4], 273-7