The p-type modulation doping of heterostructures, using N as a dopant, produced a marked interdiffusion of the quantum wells. Photoluminescence, secondary ion mass spectrometry, and X-ray diffraction measurements provided a coherent picture of the interdiffusion process. Thus, the destruction of quantum wells occurred via the exchange of Cd and Mg atoms across the interface, while the Zn atoms remained on their lattice sites. It was shown that the presence of N at the interface, which enhanced interdiffusion, was related to the diffusion of N; rather than segregation. Other mechanisms were observed at higher doping levels.

Interdiffusion Mechanisms in CdTe/CdMgZnTe:N Modulation-Doped Heterostructures A.Arnoult, J.Cibert, S.Tatarenko, A.Wasiela: Journal of Applied Physics, 2000, 87[8], 3777-84