Photoluminescence and photo-induced current transient spectroscopic measurements were made of As-doped CdTe/Cd0.96Zn0.04Te heterostructures which had been grown by means of molecular beam epitaxy. The temperature dependence of the photoluminescence spectra showed that the luminescence intensity of the exciton peak, which was related to the neutral acceptors (A0, X), decreased with increasing temperature. The activation energy of the (A0, X) peak for As-doped CdTe epilayers was 0.007eV. Five hole-trap peaks were found for the annealed As-doped heterostructure. Two of these peaks were thought to be related to extrinsic impurities, and the other 3 peaks were attributed to intrinsic impurities.

Optical Properties and Annealing Effects on the Deep Levels in As-Doped CdTe/CdZnTe (211)B Heterostructures M.S.Han, T.W.Kang, T.W.Kim: Journal of Materials Research, 2000, 15[3], 642-6