Electron paramagnetic resonance and photo-induced electron paramagnetic resonance were used to evaluate shallow-donor defects in crystals which had been grown using the high-pressure Bridgman technique or the horizontal Bridgman method (with In doping). Liquid-He photoluminescence methods were also used to identify other defects in the crystals. Spectra were obtained which contained sharp excitonic lines, shallow and deep DAP emission bands and a deeper 1.1eV emission. The photo-induced electron paramagnetic resonance data were used to determine the concentrations of isolated donor centres, while the electron paramagnetic resonance signals (in the absence of illumination) gave a measure of the net compensation.

Electron Paramagnetic Resonance Investigation of Donor Impurities in CdZnTe Grown by Different Techniques N.C.Giles, C.I.Rablau, N.Y.Garces, K.Chattopadhyay, A.Burger, E.Cross, F.P.Doty, R.B.James: Proceedings of the SPIE, 1999, 3768, 472-80