An overview of the accumulated data on defects in this material was presented. On the basis of this, it was concluded that the main defects, which accommodated changes in film composition in group-III rich p-type specimens were normally found in large super-clusters on (001) planes. This was due to electrostatic interactions of the individual defect cluster dipoles. Super-clustering explained why the defects were electrically inactive, why the hole mobility did not depend upon the defect concentration or composition and why the hole concentration depended so little upon composition. One form of the super-clusters could explain the CuPt ordering which was observed in some cases. Because group-III rich samples became n-type under the influence of an electric field in the material, or upon adding group-III elements beyond a critical level, the clusters partially or fully decomposed and pinned the Fermi energy at the InCu2+ defect level.

The Electronic Effects of Point Defects in Cu(In,Ga)Se2 A.Rockett: Thin Solid Films, 2000, 361-362, 330-7