Samples of p-type and n-type crystalline material were implanted with 20keV Li+, at room temperature, to fluences of 3.2 x 1015 and 3.2 x 1016/cm2, respectively. The Li depth profiles were measured by using neutron depth-profiling techniques. Diffusional deviations of the profiles from ballistic form were simulated by using numerical simulations. It was concluded that Li underwent considerable radiation-enhanced mobility during implantation, and that the radiation-enhanced Li diffusivity depended to some extent upon the conductivity state of the material. The incidence of radiation-enhanced Li diffusion decreased with increasing implantation fluence. At lower fluences, the Li exhibited some thermal mobility. The latter was negligible after high-fluence implantation. The diffusional redistribution could be described quite well by depth-independent diffusion without trapping.

On the Redistribution of 20keV Lithium in CuInSe2 D.Fink, G.Lippold, M.V.Yakushev, R.D.Tomlinson, R.D.Pilkington: Solar Energy Materials and Solar Cells, 1999, 59[3], 217-31