In monocrystalline p-type samples, with a room-temperature hole concentration of about 1017/cm3, partial type-conversion was observed to take place after heat-treatment at 500C in Ar at atmospheric pressure. The depth of the outer n-layer in the original p-type material, as determined by hot probing and etching, increased roughly as the square root of the annealing time. This variation suggested the existence of an out-diffusing acceptor with a diffusion coefficient, at 500C, of about 7.3 x 10-7cm2/s and a compensation donor/acceptor concentration ratio of less than 10% in the original p-type material. Auger profiles in similar stoichiometrically-prepared monocrystals indicated a 2 to 4% loss of Se after annealing (350C, 2h). This identified Se as being the main out-diffusing species.

Annealing of Monocrystalline CuInSe2 Samples C.H.Champness, G.I.Ahmad: Thin Solid Films, 2000, 361-362, 482-7