The effects of Mg ion implantation upon the electrical properties of epitaxial thin films were investigated. Implantation was carried out by using multi-energy techniques to obtain a constant profile of the Mg concentration along the depth direction. After implantation, the layers were annealed at 400C in N for 1h. The results of reflection high-energy electron diffraction examination confirmed that the damage due to ion implantation was removed by annealing. The conductivity of all of the implanted films was of n-type, and the carrier concentration increased with increasing Mg concentration. It was concluded that Mg atoms acted as donors.

Effect of Mg Ion Implantation on Electrical Properties of CuInSe2 Thin Films T.Tanaka, A.Wakahara, A.Yoshida, T.Ohshima, H.Itoh, S.Okada: Journal of Applied Physics, 2000, 87[7], 3283-6