Numerical simulations of the defect distribution were carried out as a function of the stoichiometry. The simulations were based upon a new analysis of intrinsic defects in this material. The results of the calculations were compared with previous electrical and positron lifetime measurements. This led to the conclusion that the single defects: VSe, VCu, CuIn and the defect pair (2VCu-InCu), occurred in considerable concentrations.

Calculation and Experimental Characterization of the Defect Physics in CuInSe2 J.Klais, H.J.Moller, D.Cahen: Thin Solid Films, 2000, 361-362, 446-9