Silicon self-diffusion and B diffusion were simultaneously investigated in thermally grown 28SiO2; co-implanted with 30Si and B. The B diffusivity increased with decreasing distance between the implanted B and the Si/SiO2 interface; in the same way as Si self-diffusivity. This, together with a numerical simulation, showed that SiO molecules which were generated at the Si/SiO2 interface and diffused into SiO2, enhanced not only Si self-diffusion but also B diffusion. It was also found that the diffusivities of Si and B increased at higher B concentrations. The experimental results could be quantitatively explained by assuming that the diffusivity of SiO, which enhanced the diffusivities of Si and B, increased at higher B concentrations.

Correlated Diffusion of Silicon and Boron in Thermally Grown SiO2. M.Uematsu, H.Kageshima, Y.Takahashi, S.Fukatsu, K.M.Itoh, K.Shiraishi: Applied Physics Letters, 2004, 85[2], 221-3