Scanning tunnelling microscopy and spectroscopy were used to examine the Si cluster-like defects which were created by a scanning probe-induced process around the intrinsic defects in a thermally grown SiO2 film on Si. These defects were compared with Si clusters, deposited onto ultra-thin Si oxide. Two types of defects were recognized, which had energy gaps at around 3.8 and 2.5eV. It was proposed that these 2 types of defect corresponded to inner and surface damage to SiO2 film.

Scanning-Probe Induced Defects in Thin SiO2 Film on Si - Comparison with Si Clusters. N.Miyata, M.Ichikawa: Physical Review B, 2004, 70[7], 073306 (4pp)