The main luminescent centers in SiO2 films were the red luminescence R (1.85eV) of the non-bridging O hole center and the O deficient center with a blue B (2.7eV) and a UV band (4.4eV). Implanted H diminishes the red luminescence but increased the blue and the UV bands. Thus, H passivated the non-bridging O hole center and kept the O deficient centers in active emission states. A preliminary model of luminescence center transformation was based on radiolytic dissociation and re-association of mobile O and H at the centers as well as formation of interstitial H2, O2, and H2O molecules.

Luminescent Defect Dynamics in Amorphous SiO2:H. H.J.Fitting, T.Ziems, R.Salh, A.von Czarnowski, B.Schmidt: Physica Status Solidi C, 2005, 2[1], 693-8