The diffusion behavior of O at (or near to) the Si/SiO2 interface was investigated. The float-zone grown Si substrates were first oxidized, and the SiO2-covered substrates were then annealed in Ar. Wet and dry oxidation conditions were examined. The depth profiles of O in-diffusion in these heat-treated Si substrates were measured by means of secondary ion mass spectrometry. It was found that the energy of dissolution (in-diffusion) of an O atom, that dominated the O concentration at the Si/SiO2 interface, depended upon the oxidation condition: being 2.0 and 1.7eV for wet and dry oxidation, respectively. It was also found that the barrier heights for O diffusion during Ar annealing were significantly different for the various ambients used for SiO2 formation: being 3.3 and 1.8eV for wet and dry oxidation, respectively. This suggested that the microscopic behavior of the O atoms at the Si/SiO2 interface during Ar annealing depended upon the ambient used for SiO2 formation.

Annealing Behavior of Oxygen In-Diffusion from SiO2 Film into Silicon Substrate. T.Abe, H.Yamada-Kaneta: Journal of Applied Physics, 2004, 96[8], 4143-9