It was demonstrated that S in-diffusion was a suitable tool for studying diffusion on the As sub-lattice. The interaction of S with dislocations, and the formation of extended defects, was investigated by means of cathodoluminescence and transmission electron microscopy. The S in-diffusion was governed by the kick-out mechanism. At low S concentrations, diffusion proceeded under equilibrium conditions for As self-interstitials. In this case, the diffusion profile was erf-like and was determined essentially by the S diffusion coefficient. At higher S concentrations, the S diffused under non-equilibrium conditions. Extended defects were formed during the in-diffusion process, and were observed at depths beyond the S diffusion profile. Diffusion into dislocation-rich material was investigated in order to study the interaction of S with extended defects. Enrichment of S at the dislocations was found.

Investigations of Extended Defects after Sulfur Diffusion in GaAs N.Engler, H.S.Leipner, R.F.Scholz, P.Werner, F.Syrowatka, J.Schreiber, U.Gösele: Solid State Phenomena, 1999, 69-70, 443-8