An overview of the present knowledge and understanding of defects in dilute nitrides was provided, and their important role in opto-electronic device applications was underlined. Recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in Ga(In)NAs and Ga(Al, In)NP were considered in some detail; in an attempt to provide chemical identification and experimental signatures for defects. Intrinsic defects such as antisites and self-interstitials were positively identified, and the effects of growth conditions, chemical composition and post-growth processing upon defect formation were studied. The experimental findings were expected to provide useful guidance for eliminating defects that were harmful to device performance.

Defects in Dilute Nitrides. I.A.Buyanova, W.M.Chen, C.W.Tu: Journal of Physics - Condensed Matter, 2004, 16[31], S3027-35