Numerical resolution, in the case of anisotropic elasticity, of the problem of a misfit dislocation located between an infinite substrate and a 2-layer composite was carried out. In the case considered, the period of a network of misfit dislocations was taken to be much greater than the thickness of the 2 foils. Thus, in the vicinity of the dislocation, the limiting boundary conditions were close to those for a Volterra translation dislocation. The elastic fields of the displacement and stress were calculated, for various orientations of the Burger’s vector, by inverting a 30 x 30 matrix. The precision of the results was tested by comparing the deduced interfacial relative displacement with the results of an analytical expression which described the same displacement. The composite, NiSi2/Si/ (001)GaAs, was used as an example.

Numerical Simulation of the Anisotropic Elastic Field Generated by a Misfit Dislocations along a NiSi2/Si/(001)GaAs Heterotwin Interface. M.Brioua, R.Benbouta, S.Madani, L.Adami: Journal of Colloid and Interface Science, 2005, 282[1], 120-3