It was noted that, due to a lack of commercially available large-sized native substrates, the reduction of threading dislocations remained one of the main challenges of group III-nitride-based technology. A review was presented of the major methods aimed at producing high-quality hetero-epitaxial nitride films with reduced densities of dislocations. Methods such as, incorporation of buffer layers, substrate nitridation, interlayer insertion, silane-ammonia treatment, lateral overgrowth and growth of thick nitride layers were reviewed. Advantages and drawbacks of these methods were compared.

Classic and Novel Methods of Dislocation Reduction in Hetero-Epitaxial Nitride Layers. J.Jasinski: Physica Status Solidi C, 2005, 2[3], 994-1005