The formation and relaxation of radiation-induced defects which resulted from the implantation of 50keV Si ions, and subsequent annealing in arsine (850C, 600s), were studied by using triple-crystal X-ray diffractometry and secondary ion mass spectroscopy. It was shown that the existence of a vacancy-enriched layer, which stimulated the diffusion of an introduced dopant into the substrate surface, could appreciably affect the distribution profiles of dopants during the preparation of thin implanted layers.

Formation of Radiation-Induced Point Defects in Silicon Doped Thin Films upon Ion Implantation and Activating Annealing V.T.Bublik, K.D.Shcherbachev, E.A.Komarnitskaya, Y.N.Parkhomenko, E.A.Vygovskaya, S.B.Evgenev: Kristallografiya, 1999, 44[6], 1106-12 (Crystallography Reports, 1999, 44[6], 1035-41)