Defect formation in Si-implanted (211) wafers was studied by means of X-ray diffraction, secondary ion mass spectrometry and transmission electron microscopy. The wafers were implanted to doses which were lower than those necessary for amorphization. It was shown that, under these conditions, the concentration of radiation defects in the implanted layer was lower than their concentration in the (100) wafers, and that these defects could be easily annealed out via fast photon annealing.

Specific Features of Defect Formation in Si-Implanted (211)GaAs Wafers V.T.Bublik, S.B.Evgenev, S.P.Ivanov, A.A.Kalinin, M.G.Milvidskii, A.V.Nemirovskii: Kristallografiya, 1999, 44[5], 890-3 (Crystallography Reports, 1999, 44[5], 829-32)