Using molecular beam epitaxy, CuInS2 (CIS) films were grown onto 4-in Si(111) substrates. For a detailed investigation by means of photoluminescence spectroscopy, samples were either taken as grown or subjected to post-growth treatments, including KCN etching and H implantation. Altogether, 6 defect-related transitions at 1.48 (1), 1.436 (2), 1.395 (3), 1.345 (4), 1.195 (5) and 1.03eV (6) were observed and analyzed by means of power-dependent measurements. One free-to-bound (1) and 5 donor–acceptor transitions (2 to 6) were identified. The energetically highest of these observed transitions were combined in a model for intrinsic defect levels which includes two acceptor and one donor states.

Defect-Related Photoluminescence of Epitaxial CuInS2. J.Eberhardt, H.Metzner, R.Goldhahn, F.Hudert, U.Reislöhner, C.Hülsen, J.Cieslak, T.Hahn, M.Gossla, A.Dietz, G.Gobsch, W.Witthuhn: Thin Solid Films, 2005, 480-481, 415-8