The rapid thermal annealing behavior of several types of defect in semi-insulating material which had been irradiated to various neutron fluences was characterized by using a photoluminescence technique. It was found that transmutation impurities formed not only donors, but also the acceptor: GeAs (1.4783eV peak). The intensity ratio of this peak, to the 1.4917eV peak of CAs, increased with neutron dose. This was consistent with the expected increase in GeAs which was produced by transmutation. Short-term heat-treatment led to an increase in the numbers of antisite defects, GaAs, and complex centres, IGa-VAs, after neutron irradiation. It was concluded that the 2 types of defect, GaAs and IGa-VAs, were the products of defect reaction during annealing.

Photoluminescence Study of the Defects Induced by Neutron Irradiation and Rapid Annealing in Semi-Insulating GaAs J.Liu, P.Wang: Journal of Applied Physics, 1999, 86[2], 764-7