GaAs doping superlattices were implanted with 0.5MeV H ions at doses ranging from 1012 to 1016/cm2. This gradually modified their optical characteristics from superlattice behavior to something resembling the bulk material and beyond. Ellipsometry and near infra-red reflectance measurements were used to determine the dose dependent effective band gap. Implantation damage could be reversed to a large extent by a simple thermal annealing step.

Defect Tuning of GaAs Doping Superlattices by Hydrogen Ion Implantation. D.J.Brink, K.M.Haile, H.W.Kunert: Physica Status Solidi A, 2005, 202[4], 636-41