Measurements of electrical conductivity and Rutherford back-scattering were used to study the accumulation of defects in GaAs that was subjected to pulsed (1.3 x 10–2s, off-duty factor of 100) and continuous irradiation with 32S, 12C and 4He ions at room temperature using ion-energies of 100 to 150keV, doses of 109 to 6 x 1016/cm2 and current densities of 10–9 to 3 x 10–6A/cm2. It was shown that the defect-accumulation rate during pulsed implantation was much lower than it was during continuous implantation.

The Accumulation of Radiation Defects in Gallium Arsenide Subjected to Pulsed and Continuous Ion Implantation. M.V.Ardyshev, V.M.Ardyshev, Y.Y.Kryuchkov: Semiconductors, 2005, 39[3], 293-5